smd t ype mosfet 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. drain ?? featur es ?? low on-resi st ance. ?? fas t s w it chi ng speed. ?? si lic on n-channel mosfe t ?? drive ci rcui ts can be s im ple. ?? absolute max im um ratings t a = 25 ?? param eter sym bol rati ng unit drain-s ource volt age v dss 30 v gate-s ource volt age v gss ? 20 v i d 100 i dp* 1 400 tot al power diss ipat ion p d * 2 200 mw channel t o am bient r th(ch-a) * 2 625 ?? /w channel tem perature tc h 150 ?? st orage tem perature t stg -55 to +150 ?? *1. pw ? 10s , dut y cyc le ? 1%. *2. w it h each pi n m ounted on t he recom m ended lands . drain c urrent ma drain source gate ? gate protection diode 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd t ype 2SK3018 mosfet mosfet smd type smd type product specification
smd t ype 2SK3018 ?? electric al charac teris tics t a = 25 ?? param eter sym bol tes tc ondit ons mi n typ max unit gate-s ource l eakage i gss v gs = ? 20 v , v ds = 0 v 1 a drain-s ource b reakdown voltage v (br )ds s i d = 10 a , v gs = 0v 30 v zero gat e voltage drai n current i dss v ds = 30 v, v gs = 0v 1 a gate t hreshol d voltage v gs(th) v ds = 3 v, i d = 100 a 0.8 1.5 v st ati c drai n-sourc e on-st ate res is tanc e r ds (on) i d = 10 m a, v gs = 4v i d = 1m a, v gs = 2.5v 5 7 8 13 |? forw ard trans fer adm it tanc e y fs v ds = 3 v, i d = 10 m a 20 ms input capac it ance c is s v ds = 5 v, 13 pf output capac it ance c oss v ds = 0 v, 9 pf reverse t ransf er capac it ance c rss f= 1 m hz 4 pf turn-on delay t im e t d(on) i d = 10 m a, v dd = 5 v, 15 ns rise time t r v gs = 5 v, 35 ns turn-off ti m e t d(off) r l =500 |? 80 ns fall tim e t r r g = 10 |? 80 ns mosfet ? 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com mosfet smd type smd type product specification
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